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| "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A (5K minimum) - typically 600 at 5A COMPLEMENTARY TYPE - FMMT734 PARTMARKING DETAIL - 634 FMMT634 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 120 100 12 5 900 625 -55 to +150 UNIT V V V A mA mW C * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. FMMT634 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 0.67 0.72 0.75 0.82 0.68 0.85 1.5 MIN. 120 TYP. 170 MAX. UNIT V CONDITIONS. I C=100A I C=10mA* I E=100A V CB=80V V EB=7V V CES=80V I C=100mA, I B=1mA I C=250mA, I B=1mA I C=500mA, I B=5mA I C=900mA, I B=5mA I C=900mA, I B=5mA I C=1A, I B=5mA * I C=1A, I B=5mA * I C =1A, V CE=5V* I C=10mA, V CE=5V * I C=100mA, V CE=5V * I C=1A, V CE=5V * I C=2A, V CE=5V * I C=5A, V CE=5V * I C=1A, V CE=2V * MHz I C=50mA, V CE=10V f=100MHz V CB=10V, f=1MHz I C=500mA V CC=20V I B=1mA * * * * * 100 115 V 12 16 V 10 nA 10 nA 100 nA 0.75 0.80 0.85 0.93 -- 0.96 1.65 V V V V V Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 20K 15K 5K V 1.33 1.5 V 50K 60K 40K 14K 600 24K 140 Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) 9 290 2.4 20 pF ns s *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. Tj=150C FMMT634 TYPICAL CHARACTERISTICS 1.6 +25C 1.6 IC/IB=500 1.2 0.8 VCE(sat) -(V) VCE(sat) -(V) IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 1.2 -55C +25C +100C 0.8 0.4 0.4 0 1mA 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 120K VCE=5V 2.0 IC/IB=500 -55C +25C +100C hFE - Typical Gain 90K +100C 1.5 60K +25C VBE(sat) - (V) 1.0 30K -55C 0.5 0 1mA 0 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 1.8 1.5 VCE=5V 10 IC-Collector Current (A) 1 VBE(on) - (V) 1.2 0.9 0.6 0.3 0 1mA 10mA 100mA 1A 10A -55C +25C +100C 0.1 0.01 DC 1s 100ms 10ms 1ms 100us 0.001 0.1V 1V 10V 100V IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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